| Autor: |
Higgs, V., Kightley, P., Goodhew, P.J., Augustus, P.D. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/12/1991, Vol. 59 Issue 7, p829, 3p, 4 Black and White Photographs, 2 Graphs |
| Abstrakt: |
Demonstrates a misfit dislocation nucleation mechanism for metastable silicon germinide (SiGe)/Si. Introduction of dislocations into a misfitting crystal boundary; Confirmation of surface loop nucleation; Implications for the growth and processing of metastable strained Si/Ge layers. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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