Strain-induced phase separation in annealed low-temperature grown Al[sub 0.3]Ga[sub 0.7]As.
| Autor: | Hsieh, K.C., Hsieh, K.Y., Hwang, Y.L., Zhang, T., Kolbas, R.M. |
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| Zdroj: | Applied Physics Letters; 3/25/1996, Vol. 68 Issue 13, p1790, 3p, 5 Diagrams |
| Abstrakt: | Investigates the strain induced phase separation in annealed low temperature aluminum gallium arsenide film. Existence of miscibility gap in the strained film; Proposal of a strain driven vacancy assisted mechanism; Segregation of arsenic clusters. |
| Databáze: | Complementary Index |
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