| Autor: |
Katz, A., Feingold, A., Moriya, N., Nakahara, S., Abernathy, C.R., Pearton, S.J., El-Roy, A., Geva, M., Baiocchi, F.A., Luther, L.C., Lane, E. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/22/1993, Vol. 63 Issue 21, p2958, 3p, 2 Black and White Photographs, 3 Graphs |
| Abstrakt: |
Examines the growth of indium phosphide epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition using tertiarybutylphosphine. Characteristics of the undoped layers; Use of hydrogen as the carrier gas for the metalorganic precursors. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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