Trapping a precursor to chemisorption at 32 K--NH[sub 3] adsorption on Cu(110).

Autor: Mocuta, D., Ahner, J., Yates Jr., J.T.
Předmět:
Zdroj: Journal of Chemical Physics; 10/15/1997, Vol. 107 Issue 15, p5968, 5p, 4 Diagrams, 1 Graph
Abstrakt: Examines the trapping of precursor to chemisorption at 32 K adsorption on copper. Identification of ionic products produced in the electron stimulated desorption ion angular distribution (ESDIAD); Low-temperature adsorption; Two-beam ESDIAD pattern.
Databáze: Complementary Index