| Autor: |
Elsass, C.R., Smorchkova, I.P., Heying, B., Haus, E., Fini, P., Maranowski, K., Ibbetson, J.P., Keller, S., Petroff, P.M., DenBaars, S.P., Mishra, U.K., Speck, J.S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/6/1999, Vol. 74 Issue 23, p3528, 3p, 3 Graphs |
| Abstrakt: |
Reports that high-quality AlGaN/GaN heterostructures have been grown by radio-frequency plasma-assisted molecular beam epitaxy on n-type GaN templates grown on sapphire by metal organic chemical vapor deposition. Room temperature mobility for the two-dimensional electron gas channel using a two layer model from the measured mobility for the whole structure. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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