Growth of GaInAsP using ethyldimethylindium and tertiarybutylphosphine.

Autor:	Sharps, P.R., Timmons, M.L., Colpitts, T.S.
Předmět:	THIN films METAL organic chemical vapor deposition INDIUM PHOSPHINE
Zdroj:	Applied Physics Letters; 5/6/1991, Vol. 58 Issue 18, p2006, 3p, 1 Chart, 2 Graphs
Abstrakt:	Studies the growth of GaInAsP lattice matched to GaAs by organometallic vapor phase epitaxy using ethyldimethylindium and tertiarybutylphosphine. Composition of the films; Preparation of n- and p-type doped layers; Photoluminescence measurements on intrinsic films.
Databáze:	Complementary Index
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