Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces.

Autor: Yin, X., Chen, H-M., Pollak, F.H., Chan, Y., Montano, P.A., Kirchner, P.D., Pettit, G.D., Woodall, J.M.
Předmět:
Zdroj: Applied Physics Letters; 1/21/1991, Vol. 58 Issue 3, p260, 3p, 4 Graphs
Abstrakt: Details a photoreflectance study of surface photovoltage effects on the determination of Fermi level pinning on n-gallium arsenide (GaAs) in air and with W-metal coverage as a function of temperature and light intensity. Photoreflectance spectrum at room temperature; Measured barrier height.
Databáze: Complementary Index