Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write.

Autor: Chao, L.C., Lee, B.K., Chi, C.J., Cheng, J., Chyr, I., Steckl, A.J.
Předmět:
Zdroj: Applied Physics Letters; 9/27/1999, Vol. 75 Issue 13, p1833, 3p, 1 Diagram, 6 Graphs
Abstrakt: Discusses the upconversion luminescence obtained from the rare earth element erbium by focused-ion-beam (FIB) direct write. Strong green upconversion and infrared excitation; Maximum upconversion intensity.
Databáze: Complementary Index