Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write.
Autor: | Chao, L.C., Lee, B.K., Chi, C.J., Cheng, J., Chyr, I., Steckl, A.J. |
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Zdroj: | Applied Physics Letters; 9/27/1999, Vol. 75 Issue 13, p1833, 3p, 1 Diagram, 6 Graphs |
Abstrakt: | Discusses the upconversion luminescence obtained from the rare earth element erbium by focused-ion-beam (FIB) direct write. Strong green upconversion and infrared excitation; Maximum upconversion intensity. |
Databáze: | Complementary Index |
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