Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices.
| Autor: | Pullin, M. J., Hardaway, H. R. |
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| Zdroj: | Applied Physics Letters; 11/29/1999, Vol. 75 Issue 22, p3437, 3p, 4 Graphs |
| Abstrakt: | Studies type II InAs/InAsSb strained-layer-superlattice negative luminescence devices. Negative luminescence operation of p-n diode devices; Spectral peak and luminescence efficiency. |
| Databáze: | Complementary Index |
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