| Autor: |
Palinginis, Kimon C., Lubianiker, Yoram, Cohen, J. David, Ilie, Adelina, Kleinsorge, Britta, Milne, William I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/18/1999, Vol. 74 Issue 3, p371, 3p, 1 Chart, 3 Graphs |
| Abstrakt: |
Deduces the defect density in thin tetrahedrally bonded morphous carbon (ta-C) using junction capacitance measurements performed on ta-C/crystalline-Si (c-Si) heterostructures. Drive level capacitance profiling of the heterostructures; Admittance measurements; Characteristics of the ta-C/c-Si heterostructures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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