| Autor: |
Aoki, Nobutoshi, Kanemura, Takahisa, Mizushima, Ichiro |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/6/1994, Vol. 64 Issue 23, p3133, 3p, 5 Graphs |
| Abstrakt: |
Examines the anomalous diffusion of lightly implanted As into Si substrate during nitrogen conventional furnace annealing. Observation of two conspicuous features at near-surface and at the tail region; Movement of a large number of As atoms toward the oxide/Si interface; Detection of retarded diffusion at the tail region. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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