| Autor: |
Nur, O., Willander, M., Radamson, H.H., Sardela Jr., M.R., Hansson, G.V., Petersson, C.S., Maex, K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/24/1994, Vol. 64 Issue 4, p440, 3p, 4 Diagrams, 1 Graph |
| Abstrakt: |
Characterizes the cobalt silicides/n-silicides germanium/p-silicides heterostructures. Combination of silicon molecular beam epitaxy with cobalt sputtering; Application of high-resolution x-ray diffraction mapping in SiGe strain investigation; Obtainment of transistor action with low-current gain. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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