| Autor: |
Golding, T.D., Dura, J.A., Wang, W.C., Vigilante, A., Moss, S.C., Chen, H.C., Miller Jr., J.H., Hoffman, C.A., Meyer, J.R. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/23/1993, Vol. 63 Issue 8, p1098, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Describes the epitaxial growth of antimony (Sb) films on gallium antimonide (GaAs) substrates. Influence of a confinement-induced positive energy gap on nonlinear optical switches; Exploitation of the long mean free path in Sb for quantum transport evaluation; Application of Sb/GaAs system to electronic devices incorporating heterostructures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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