| Autor: |
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/27/1999, Vol. 75 Issue 26, p4106, 3p, 6 Graphs |
| Abstrakt: |
Studies the effects of isoelectronic indium (In) doping on the crystalline and optical properties of gallium nitride (GaN) grown on sapphire with hydrogen or nitrogen carrier gas by metalorganic vapor phase epitaxy. Relationship between lattice constants obtained by x-ray diffraction analysis; Increase of trimethylindium flow during growth. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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