| Autor: |
Pullin, M. J., Hardaway, H. R., Heber, J.D., Phillips, C.C., Yuen, W.T., Moeck, P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/19/1999, Vol. 74 Issue 16, p2384, 3p, 4 Graphs |
| Abstrakt: |
Examines room-temperature InAsSb strained-layer superlattice light-emitting diodes at lambda=4.2 micrometer with AlSb barriers for improved confinement. Growing of the structures by molecular beam epitaxy; Comparison with a near identical structure grown without the barrier layer. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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