| Autor: |
Liu, H.I., Biegelsen, D.K., Ponce, F.A., Johnson, N.M., Pease, R.F.W. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/14/1994, Vol. 64 Issue 11, p1383, 3p, 2 Diagrams, 4 Graphs |
| Abstrakt: |
Examines the techniques for fabricating sub-five nanometer silicon nanowires. Use of the materials for analysis of optical and electrical properties; Characterization of fabricated structures by transmission electron microscopy; Mechanism of the self-limiting oxidation phenomenon of the nanostructures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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