| Autor: |
Hirayama, Y., Tarucha, S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/25/1993, Vol. 63 Issue 17, p2366, 3p, 4 Graphs |
| Abstrakt: |
Examines the transport characteristics of an AlGaAs/InGaAs/GaAs four-terminal structures by focused ion beam scanning. Comparison of the negative peak of the bend resistance and the magnetic field curve; Indication of the temperature dependence of the negative peak amplitude of the structure; Effect of thermal broadening of the electron energy on the system. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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