| Autor: |
Ozturk, Mehmet C., Sanganeria, Mahesh K., Sorrell, F. Yates |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/30/1992, Vol. 61 Issue 22, p2697, 3p, 4 Graphs |
| Abstrakt: |
Examines the uniformity degradation mechanism in rapid thermal chemical vapor deposition using polycrystalline silicon on silicon dioxide. Use of small temperature variations to initiate degradation; Determination of the absorbed light by the wafer absorptivity of the heat lamp; Analysis of absorptivity as a function of the surface layer thickness. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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