Study of mechanism to control electrical properties of AlAs grown using amine-alane with....

Autor: Miyakoshi, Kaoru, Suemune, Ikuo
Předmět:
Zdroj: Applied Physics Letters; 3/21/1994, Vol. 64 Issue 12, p1549, 3p, 6 Graphs
Abstrakt: Examines the mechanism to control electrical properties of aluminum arsenide films grown by metalorganic molecular beam epitaxy. Critical dependence of electrical properties on the supply ratio of the precursor; Factor to control the electrical properties; Decomposition of the trimethylamine on aluminum surface.
Databáze: Complementary Index