| Autor: |
Ching-Hui Chen, Ibbetson, James P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/28/1997, Vol. 71 Issue 4, p494, 3p, 1 Diagram, 5 Graphs |
| Abstrakt: |
Describes an aluminum gallium arsenide/gallium arsenide (GaAs) high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer. Reduction in optical ion damage during dry-etch gate recess formation; Comparison with devices without an ion damage blocking layer; Implication for ion-assisted electronic devices fabrication. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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