Stabilization of face-centered-cubic Mn films via epitaxial growth on GaAs(001).

Autor:	Jin, X., Zhang, M.
Předmět:	THIN films EPITAXY REFLECTION high energy electron diffraction
Zdroj:	Applied Physics Letters; 12/12/1994, Vol. 65 Issue 24, p3078, 3p, 4 Diagrams, 1 Chart, 2 Graphs
Abstrakt:	Presents techniques for fabricating face-centered-cubic manganese (Mn) thin films on gallium arsenide(001) surfaces by epitaxy. Use of in situ reflection high energy electron diffraction and ex situ x-ray diffraction methods; Lattice parameters of the metastable Mn films; Transition region composed of Mn-gallium-arsenic alloy formed at the interface.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu