Persistent room-temperature relaxation of InP amorphized and compacted by MeV ion beams.

Autor:	Cliche, L., Roorda, S.
Předmět:	ION bombardment SEMICONDUCTOR wafers INDIUM phosphide RELAXATION (Nuclear physics)
Zdroj:	Applied Physics Letters; 10/3/1994, Vol. 65 Issue 14, p1754, 3p, 2 Diagrams, 1 Chart, 2 Graphs
Abstrakt:	Investigates the effect of ion beam amorphization on indium phosphide wafers. Induction of deformation and compaction; Loss of density in a spontaneous room-temperature relaxation; Occurrence of spontaneous annealing process.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu