Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin....

Autor: Lush, G.B., Melloch, M.R.
Předmět:
Zdroj: Applied Physics Letters; 11/16/1992, Vol. 61 Issue 20, p2440, 3p, 1 Diagram, 4 Graphs
Abstrakt: Examines the microsecond lifetimes of moderately doped, thin film, n-GaAs/Al[sub 0.3]Ga[sub 0.7]As double heterostructure membranes. Enhancement of photon recycling caused by removal of substrate; Structure of double heterostructure showing hole etched in substrate; Measurement of decays for the 5 micrometer double heterostructure.
Databáze: Complementary Index