Negative differential conductance observed in a lateral double constriction device.

Autor:	Wu, J.C., Wybourne, M.N.
Předmět:	TRANSISTORS ELECTRON mobility ELECTRIC contacts
Zdroj:	Applied Physics Letters; 11/16/1992, Vol. 61 Issue 20, p2425, 3p, 1 Black and White Photograph, 2 Diagrams, 2 Graphs
Abstrakt:	Examines the fabrication of lateral double point contact devices using a split-gate high electron mobility transistor. Exhibition of S-shaped negative differential conductivity (SNDC) of solid state electronic devices; Purpose of depletion below the split gate of the devices; Control of SNDC by adjusting the gate bias.
Databáze:	Complementary Index
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