| Autor: |
Grey, Francois, Hermansson, Karin |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/8/1997, Vol. 71 Issue 23, p3400, 3p, 4 Black and White Photographs |
| Abstrakt: |
Demonstrates the preservation of atomic-scale structure of silicon surfaces by contact bonding. Provision of ultra-high vacuum conditions by bond cleavage; Protection of ordered atomic structure of the surfaces from oxidation; Reduction of surface contamination by contact bonded silicon wafers. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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