| Autor: |
Poudoulec, A., Guenais, B. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/11/1992, Vol. 60 Issue 19, p2406, 3p, 2 Black and White Photographs, 2 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
Investigates the interface morphology of gallium arsenide (GaAs)/aluminum arsenide superlattices grown by molecular beam epitaxy on the misoriented GaAs substrates. Application of the transmission electron microscopy; Observation of monolayer height steps and terrace width variations; Observation on the misorientation towards the (111)[sub Ga]. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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