| Autor: |
Tae-Yon Lee, Kim, Kijoon H. P., Dong-Seok Suh, Cheolkyu Kim, Youn-Seon Kang, Cahill, David G., Dongbok Lee, Min-Hyun Lee, Min-Ho Kwon, Ki-Bum Kim, Yoonho Khang |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/15/2009, Vol. 94 Issue 24, p243103, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Nanometer scale Ge2Sb2Te5 (GST) domains formed by immiscible mixture of GST-SiOx at room temperature and 180 °C show remarkable suppression in electrical and thermal conductivity. Thermal boundary resistance with increased GST-SiOx interface becomes crucial to the reduction in thermal conductivity. These conductivity reductions concurrently result in the reduction in programming current and power consumption in phase change memory devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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