Efficient defect passivation by hot-wire hydrogenation.

Autor:	Pileninger, R., Wanka, H.N.
Předmět:	PASSIVITY (Chemistry) SILICON crystals HYDROGENATION SOLAR cells
Zdroj:	Applied Physics Letters; 10/13/1997, Vol. 71 Issue 15, p2169, 3p, 3 Charts, 2 Graphs
Abstrakt:	Explores the passivation of bulk defects in polycrystalline silicon (Si) by hot-wire hydrogenation. Response of solar cells from polycrystalline Si; Improvement of minority carrier diffusion length of the solar cells; Effects of ion implantation and conventional plasma treatment on hydrogen concentration.
Databáze:	Complementary Index
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