Ga[sub x]In[sub 1-x]As/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic....
| Autor: | Keller, B.P., Yen, J.C. |
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| Zdroj: | Applied Physics Letters; 10/24/1994, Vol. 65 Issue 17, p2159, 3p, 2 Diagrams, 2 Graphs |
| Abstrakt: | Details the growth of Ga[sub x]In[sub 1-x]As/AlAs resonant tunneling diodes by atmospheric pressure metalorganic chemical vapor deposition. Use of high-resolution x-ray diffraction measurements; Evaluation of the heterostructure interface quality; Valley ratio of the resonant tunneling diodes. |
| Databáze: | Complementary Index |
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