| Autor: |
Mirin, R.P., Ibbetson, J.P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/18/1995, Vol. 67 Issue 25, p3795, 3p, 3 Black and White Photographs, 5 Graphs |
| Abstrakt: |
Demonstrates room-temperature photoluminescence at 1.3 mum from coherently strained indium gallium arsenide quantum dots grown on gallium arsenide substrates. Growth of quantum dots by molecular beam epitaxy; Similarity of the integrated photoluminescence intensity to the quantum well; Usage of the atomic force microscopy measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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