| Autor: |
Friedmann, J.B., Shohet, J.L. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/18/1995, Vol. 67 Issue 25, p3718, 3p, 4 Diagrams, 2 Graphs |
| Abstrakt: |
Examines the charging damage to polysilicon-gate metal oxide semiconductor capacitor test structure in an electron-cyclotron-resonance plasma. Effect of plasma nonuniformities on the charging damage; Characterization of damage by ramp-voltage breakdown measurements; Relationship of the plasma condition to the degree of damage. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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