| Autor: |
Liu, Y. C., Furukawa, K., Nakashima, H., Kashiwazaki, Y., Gao, D.W., Uchino, K., Muraoka, K., Suzuki, H.T |
| Předmět: |
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| Zdroj: |
Philosophical Magazine B; Jan1999, Vol. 79 Issue 1, p137-148, 12p, 1 Diagram, 10 Graphs |
| Abstrakt: |
High-quality amorphous silicon-nitrogen alloys (a-SiN x have been deposited at room temperature by a sputtering-type electron cyclotron resonance (ECR) plasma. A detailed analysis of the properties of a-SiN x films in terms of their composition, microstructure and dielectric characteristics was performed using Xray photoelectron spectroscopy, infrared (IR) spectroscopy and ramp currentvoltage measurement techniques. Their characteristics were correlated with the N2 gas flow rate (NGFR) in the ECR plasma formation. The dependence of solidstate [N]/[Si] ratios in the films on the NGFR indicated that the film composition changed from non-stoichiometry to stoichiometry as the NGFR increased from 0.5 to 1 sccm. The dependence of the IR spectra on the NGFR indicated that silicon nitride network was well ordered for an NGFR of 1 sccm, in which the dielectric breakdown-field was over 4 MV cm 1. However, when the NGFR was over 1 sccm, significant N N triple bonds (gaseous N2 molecule) were formed and were trapped inside the films. These N2 molecules formed many voids and defects; and enhanced disorder in the network. This is well correlated by chemical etch and IR results. The dependence of dielectric properties of a-SiN x films on the NGFR demonstrated that these voids and defects lead to a decrease in average dielectric breakdown field and an obvious increase in the distribution of the low breakdown field. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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