Confirmation of proton beam bending in graded Si[sub 1-x]Ge[sub x]/Si layers using ion channeling.
| Autor: | de Kerckhove, D.G., Breese, M.B.H. |
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| Zdroj: | Applied Physics Letters; 1/11/1999, Vol. 74 Issue 2, p227, 3p, 7 Graphs |
| Abstrakt: | Studies a graded composition Si[sub 1-x]Ge[sub x]/Si [001] layer by angle-resolved ion channeling analysis using focused MeV proton and He[sup +] beams. Backscattering spectrometry's confirmation that the composition is linearly graded. |
| Databáze: | Complementary Index |
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