Single-level interface states in semiconductor structures investigated by admittance spectroscopy.
| Autor: | Krispin, Peter |
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| Zdroj: | Applied Physics Letters; 3/17/1997, Vol. 70 Issue 11, p1432, 3p, 5 Graphs |
| Abstrakt: | Investigates the single-level interface states in semiconductor structures through admittance spectroscopy. Incorporation of interface states by planar doping of deep-level defects; Identification of electronic traps as interface states; Observation of the transition between capture-controlled and emission-controlled spectra. |
| Databáze: | Complementary Index |
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