| Autor: |
Mirin, Richard P., Ibbetson, James P. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 10/31/1994, Vol. 65 Issue 18, p2335, 3p |
| Abstrakt: |
Examines the reflection high-energy electron diffraction oscillations during molecular beam epitaxy of gallium arsenide alloy crystals. Application of the Monte Carlo simulations in step density oscillations depiction; Details on the As:Ga as a critical parameter; Implications of results for low temperature epitaxy research of III-V semiconductors. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
