Reduction of unintentional aluminum spikes at SiC vapor phase epitaxial layer/substrate interfaces.
| Autor: | Burk Jr., A.A., Rowland, L.B. |
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| Zdroj: | Applied Physics Letters; 1/15/1996, Vol. 68 Issue 3, p382, 3p, 3 Graphs |
| Abstrakt: | Examines the reduction of unintentional aluminum (Al) spikes at silicon carbide (SiC) vapor phase epitaxial layer/substrate interfaces. Application of secondary ion mass spectrometry; Effect of electrically active Al in doped n-type layers; Factors responsible for minimizing SiC substrate exposure. |
| Databáze: | Complementary Index |
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