Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy.

Autor:	Massa, J.S., Buller, G.S.
Předmět:	RECOMBINATION in semiconductors QUANTUM wells MOLECULAR beam epitaxy
Zdroj:	Applied Physics Letters; 3/13/1995, Vol. 66 Issue 11, p13146, 3p, 3 Graphs
Abstrakt:	Presents the recombination studies of semiconductor single quantum wells grown by molecular beam epitaxy. Use of temperature dependent time-resolved photoluminescence; Domination of the recombination; Consistency in the results.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu