Improvement of ultrathin gate oxide and oxynitride integrity using fluorine implantation technique.

Autor: Chowdhury, Prasenjit, Chou, Anthony I.
Předmět:
Zdroj: Applied Physics Letters; 1/6/1997, Vol. 70 Issue 1, p37, 3p
Abstrakt: Investigates the effects of fluorine on ultrathin gate oxide and oxynitride. Incorporation of fluorine into polycrystalline silicon; Improvement of the integrity of the oxide with the incorporation of fluorine; Discussion of the mechanism for oxide quality improvement by fluorine.
Databáze: Complementary Index