| Autor: |
MacPherson, G., Goodhew, P.J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/26/1997, Vol. 70 Issue 21, p2873, 3p, 2 Black and White Photographs, 2 Diagrams, 1 Chart |
| Abstrakt: |
Examines the dislocation blocking in In[sub x]Ga[sub 1-x]As(x<0.20) layers grown on gallium arsenide substrates revealed by strain sensitive etching. Need for the occurrence of relaxation with dislocation interaction at heteroepitaxial interfaces; Determination of dislocation mean free path; Suitability of aqueous solutions for defect etching. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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