| Autor: |
Lorentzen, J.D., Loechelt, G.H. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/5/1997, Vol. 70 Issue 18, p2353, 3p, 1 Chart, 2 Graphs |
| Abstrakt: |
Investigates the photoluminescence from Si[sub x-y]Ge[sub x]C[sub y] films grown epitaxially on silicon (100) by chemical vapor deposition. Effect of the presence of carbon to the photoluminescence lineshape; Correction of the epitaxial strain shifts using standard deformation potential theory; Formation of a resonant level within the conduction band. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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