| Autor: |
B. Heimbrodt, D. Lübbert, R. Köhler, T. Boeck, A.K. Gerlitzke |
| Zdroj: |
Crystal Research & Technology; May2009, Vol. 44 Issue 5, p534-538, 5p |
| Abstrakt: |
Spatially resolved rocking curve imaging has been used to analyze laterally overgrown silicon layers grown by liquid phase epitaxy. We were able to study both the overgrown layer as well as the strain fluctuations of the Si substrate underneath by means of a tabletop xray topographic setup. The strainfield analysis reveals relative changes of the lattice parameter up to 3.5×106in the silicon substrate underneath the overgrown layer in particular regions and a down bending of both wings of the epitaxial overgrown layers. © 2009 WILEYVCH Verlag GmbH & Co. KGaA, Weinheim [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text