Phosphorus doping of silicon by proton induced nuclear reactions.

Autor: Abril, Isabel, Garcia-Molina, Rafael
Předmět:
Zdroj: Applied Physics Letters; 5/29/1995, Vol. 66 Issue 22, p3036, 3p, 2 Graphs
Abstrakt: Proposes a method to obtain phosphorus doped silicon using proton induced nuclear resonant reactions. Production of novel microstructures in direct phosphorus ion beam implantation; Bombardment of proton beam on a natural silicon producing a silicon matrix; Reduction of target damage caused by direct phosphorus implantation.
Databáze: Complementary Index