Growth of epitaxial MgO films on Sb-passivated (001)GaAs: Properties of the MgO/GaAs interface.

Autor:	Tarsa, E.J., Wu, X.H.
Předmět:	SEMICONDUCTOR films EPITAXY GALLIUM arsenide PULSED laser deposition
Zdroj:	Applied Physics Letters; 6/26/1995, Vol. 66 Issue 26, p3588, 3p, 10 Black and White Photographs, 3 Graphs
Abstrakt:	Investigates the growth of epitaxial magnesium oxide (MgO) films on antimony (Sb)-passivated (001)gallium arsenide (GaAs) using pulsed laser deposition. Properties of MgO/GaAs interface; Reconstruction of GaAs surface; Persistence of residual Sb on the GaAs surface at 500 degree Celsius.
Databáze:	Complementary Index
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