Autor: |
Rousse, A., Rischel, C., Fourmaux, S., Uschmann, I., Sebban, S., Grillon, G., Balcou, Ph., Forster, E., Geindre, J.P., Audebert, P., Gauthier, J.C., Hulin, D. |
Předmět: |
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Zdroj: |
Nature; 3/1/2001, Vol. 410 Issue 6824, p65, 4p, 2 Graphs |
Abstrakt: |
Presents measurements of the characteristic melting time of InSb with a technique of ultrafast time-resolved X-ray diffraction that provides a direct probe of the changing atomic structure. How the electronic energy is converted into thermal motions; Application for this ability to obtain the quantitative structural characterization of non-thermal processes in semiconductors. |
Databáze: |
Complementary Index |
Externí odkaz: |
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