| Autor: |
Cuendet, Nicolas, Halicioglu, Timur |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/1/1996, Vol. 68 Issue 1, p19, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Calculates the microvoid formation free energies of {113} stacking faults in silicon. Types of stacking faults; Reduction of the free energy of formation per interstitial in a ribbon fault with the ribbon width and length; Use of the modified Tersoff potential energy function; Association of transient enhanced diffusion with implantation-produced {113}-type ribbon. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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