| Autor: |
Takeuti, D.F., Timans, P.J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/9/1995, Vol. 67 Issue 15, p2206, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Examines the emissivity of Boron-implanted and annealed silicon. Role of isothermal beam heating in annealing of implanted silicons; Contributions of spectral emissivity of material to the calculation of heat loss and radiation coupling; Fabrication of heavily doped shallow junctions in semiconductors through ion implantation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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