Growth of epitaxial Si[sub 1-x]Ge[sub x] layers on Si(001) surface, by catalytical decomposition....
| Autor: | Chelly, R., Angot, T. |
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| Zdroj: | Applied Physics Letters; 9/18/1995, Vol. 67 Issue 12, p1733, 3p, 4 Graphs |
| Abstrakt: | Presents a study on the catalytical decomposition of a disilane and germane mixture on silicon. Limitation of the thermal stability of the various germanium hydrides phases; Utilization of decomposed gas mixture in the study; Optimal conditions for the preparation of Si[sub 1-x]Ge[sub x]. |
| Databáze: | Complementary Index |
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