| Autor: |
Okojie, Robert S., Ned, Alexander A., Kurtz, Anthony D., Carr, William N. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Apr98, Vol. 45 Issue 4, p785, 6p, 1 Diagram, 6 Graphs |
| Abstrakt: |
Investigates the characteristics and electrical properties of highly doped n- and p-type 6H-Silicon Carbide (SiC) crystals for use as a piezoresistive pressure sensor for high temperature applications. Details on preparing the sample; Integrated beam modeling; Discusses the temperature effect of SiC on gauge factor and resistance; Conclusions about the longitudinal gauge factors of doped n- and p-type material. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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