| Autor: |
Ibbetson, J.P., Mishra, U.K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/24/1996, Vol. 68 Issue 26, p3781, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Examines the space-charged-limited transport in nonstoichiometric (NS) gallium arsenide (GaAs). Growth of NS-GaAs by molecular beam epitaxy; Occurrence of current saturation in the current-voltage characteristics of n+ GaAs/NS-GaAs homojunction structure; Combination between electron velocity saturation and compensated traps in annealed NS-GaAs. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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