Influence of low energy Ar-sputtering on the electronic properties of InAs-based quantum well....

Autor: Magnee, P.H.C., den Hartog, S.G.
Předmět:
Zdroj: Applied Physics Letters; 12/11/1995, Vol. 67 Issue 24, p3569, 3p, 1 Chart, 3 Graphs
Abstrakt: Investigates the influence of low energy Argon-ion milling cleaning techniques on indium arsenide-based quantum well structures. Effect of etching on electron density and mobility; Impact of anneal at 180 degree Celsius; Use of etching with a Kaufmann source and sputter-etching.
Databáze: Complementary Index