Influence of low energy Ar-sputtering on the electronic properties of InAs-based quantum well....
Autor: | Magnee, P.H.C., den Hartog, S.G. |
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Předmět: | |
Zdroj: | Applied Physics Letters; 12/11/1995, Vol. 67 Issue 24, p3569, 3p, 1 Chart, 3 Graphs |
Abstrakt: | Investigates the influence of low energy Argon-ion milling cleaning techniques on indium arsenide-based quantum well structures. Effect of etching on electron density and mobility; Impact of anneal at 180 degree Celsius; Use of etching with a Kaufmann source and sputter-etching. |
Databáze: | Complementary Index |
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